2008. 3. 11 1/3 semiconductor technical data ktb1124 epitaxial planar pnp transistor revision no : 4 voltage regulators, relay drivers lamp drivers, electrical equipment features adoption of mbit processes. low collector-to-emitter saturation voltage. fast switching speed. large current capacity and wide aso. complementary to ktd1624. maximum rating (ta=25 ) electrical characteristics (ta=25 ) note : h fe (1) classification a:100 200, b:140 280, c:200 400 characteristic symbol rating unit collector-base voltage v cbo -60 v vollector-emitter voltage v ceo -50 v emitter-base voltage v ebo -6 v collector current i c -3 a collector current(pulse) i cp -6 a base current i b -600 ma collector power dissipation p c 500 mw p c * 1 w junction temperature t j 150 storage temperature range t stg -55 150 characteristic symbol test condition min. typ. max. unit. collector cut-off current i cbo v cb =-40v, i e =0 - - -1 emitter cut-off current i ebo v eb =-4v, i c =0 - - -1 dc current gain h fe (1) (note) v ce =-2v, i c =-100 100 - 400 h fe (2) v ce =-2v, i c =-3a 35 - - collector-emitter saturation voltage v ce(sat) i c =-2a, i b =-100 - -0.35 -0.7 v base-emitter saturation voltage v be(sat) i c =-2a, i b =-100 - -0.94 -1.2 v transition frequency f t v ce =-10v, i c =-50 - 150 - collector output capacitance c ob v cb =-10v, f=1 - 39 - switching time turn-on time t on - 70 - ns storage time t stg - 450 - fall time t f - 35 - * : package mounted on ceramic substrate(250mm 2 0.8t)
2008. 3. 11 2/3 ktb1124 revision no : 4
2008. 3. 11 3/3 ktb1124 revision no : 4
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